Reviewed Journal Papers

 

November 14, 2017

Laboratory of Nanoscale Electron Devices

Division of Electronics for Informatics

Graduate School of Information Science and Technology

Hokkaido University

 

 

Published

 

2017

1.         M. Rasly, Z. Lin, and T. Uemura

gSystematic investigations of transient response of nuclear spins in the presence of polarized electronsh

Phys. Rev. B vol. 96, 184415 (8pp), Nov. 2017.

DOI: 10.1103/PhysRevB.96.184415.

 

2.         M. Inoue, B. Hu, K. Moges, K. Inubushi, K. Nakada, M. Yamamoto, and T. Uemura

gInfluence of off-stoichiometry on magnetoresisitance characteristics of Co2MnSi/Ag-based current-perpendicular-to-plane spin valvesh,

Appl. Phys. Lett. vol. 111, 082403 (5pp), August 2017.

DOI: 10.1063/1.5000244

 

3.         Z. Lin, M. Rasly, and T. Uemura,

gElectrical detection of nuclear spin-echo signals in an electron spin injection systemh,

Appl. Phys. Lett. Vol. 110, 232404 (4pp), June 2017.

DOI: 10.1063/1.4985650

 

2016

1.       B. Hu, K. Moges, Y. Honda, H.-x. Liu, T. Uemura, M. Yamamoto, J. Inoue, and M. Shirai,

gTemperature dependence of spin-dependent tunneling conductance of magnetic tunnel junctions with half-metallic Co2MnSi electrodesh,

Phys. Rev. B, vol. 94, 094428 (15pp), September 2016.

DOI: 10.1103/PhysRevB.94.094428

 

2.       T. Uemura, T. Akiho, Y. Ebina, and M. Yamamoto

gCoherent manipulation of nuclear spins using spin injection from a half-metallic spin sourceh

Proc. of SPIE, vol 9931, pp.99311L-1 – 99311L-7, September 2016. (Invited paper)

DOI: 10.1117/12.2238793

 

3.       L. Li, I. Lee, D. Lim, S. Rathi, M. Kang, T. Uemura, and G.-H. Kim,

gSpin diffusion and non-local spin-valve effect in an exfoliated multilayer graphene with a Co electrodeh,

Nanotechnology, vol. 27, 335201 (6pp), July 2016.

DOI:10.1088/0957-4484/27/33/335201

 

4.       X. Kozina, E. Ikenaga, C. E. V. Barbosa, S. Ouardi, J. Karel, M. Yamamoto, K. Kobayashi, H. J. Elmers, G. Schönhense, and C. Felser,

gDevelopment of hard X-ray photoelectron SPLEED-based spectrometer applicable for probing of buried magnetic layer valence statesh,

Journal of Electron Spectroscopy and Related Phenomena, vol. 21, pp. 12-18, May 2016.

DOI: 10.1016/j.elspec.2016.05.001

 

5.       R. Fetzer, H.-x. Liu, B. Stadtmüller, T. Uemura,M. Yamamoto, M. Aeschlimann and M. Cinchetti,

gImpact of CoFe buffer layers on the structural and electronic properties of the Co2MnSi/MgO interfaceh,

J. Phys. D: Appl. Phys. vol. 49, 195002 (5pp), April 2016.

DOI: 10.1088/0022-3727/49/19/195002

 

6.       K. Moges, Y. Honda, H.-x. Liu, T. Uemura, M. Yamamoto, Y. Miura, and M. Shirai,

gEnhanced half-metallicity of off-stoichiometric quaternary Heusler alloy Co2(Mn,Fe)Si investigated through saturation magnetization and tunneling magnetoresistanceh,

Phys. Rev. B. vol. 93, 134403 (15pp), April 2016.

DOI: 10.1103/PhysRevB.93.134403

 

7.       Z. Lin, K. Kondo, M. Yamamoto, and T. Uemura,

gTransient analysis of oblique Hanle signals observed in GaAsh,

Jpn. J. Appl. Phys. 55, 04EN03 (5pp), March, 2016.

DOI: 10.7567/JJAP.55.04EN03

 

8.       M. Rasly, Z. Lin, M. Yamamoto, and T. Uemura,

gAnalysis of the transient response of nuclear spins in GaAs with/without nuclear magnetic resonanceh,

AIP Advances 6, 056305 (8pp), March, 2016.

DOI: 10.1063/1.4943610

 

9.       T. Miyakawa, T. Akiho, Y. Ebina, M. Yamamoto, and T. Uemura,

gEfficient gate control of spin-valve signals and Hanle signals in GaAs channel with p-i-n junction-type back-gate structureh,

Appl. Phys. Express 9, 023103 (4pp), January, 2016. (Selected for Spotlights)

DOI: 10.7567/APEX.9.023103

 

[Book Chapter]

1.       M. Yamamoto and T. Uemura,

gEffect of Nonstoichiometry on the Half-Metallic Character of Co2MnSi and Its Application to the Spin Sources of Spintronic Devicesh,

Heusler Alloys, C. Felser and A. Hirohata (Eds.), Springer International Publishing Switzerland 2016, Chap. 18, pp. 413-444, Jan. 2016.

DOI: 10.1007/978-3-319-21449-8_20

 

2015

1.       T. Akiho, M. Yamamoto, and T. Uemura,

gInvestigation of spin lifetime in strained InxGa1-xAs channels through all-electrical spin injection and detectionh,

Appl. Phys. Express 8, 093001 (4pp), August, 2015

DOI: 10.7567/APEX.8.093001

 

2.       V. R. Singh, V. K. Verma, K. Ishigami, G. Shibata, A. Fujimori, T. Koide, Y. Miura, M. Shirai, T. Ishikawa,

G.-f. Li, and M. Yamamoto,

gElectronic and magnetic properties of off-stoichiometric Co2MnƒĄSi/MgO interfaces studied by x-ray magnetic circular dichroismh

J. Appl. Phys. vol. 117, 203901 (6pp), May 2015.

DOI: 10.1063/1.4921538

 

3.       T. Uemura, T. Akiho, Y. Ebina, and M. Yamamoto,

gCoherent manipulation of nuclear spins using spin injection from a half-metallic spin sourceh,

Phys. Rev. B, vol. 91, 140410(R) (5pp), April 2015.

DOI: 10.1103/PhysRevB.91.140410

 

4.       R. Fetzer, S. Ouardi, Y. Honda, H.-x. Liu, S. Chadov, B. Balke, S. Ueda, M. Suzuki, T. Uemura, M. Yamamoto, M. Aeschlimann, M. Cinchetti, G. H. Fecher, and C. Felser,

gSpin-resolved low-energy and hard X-ray photoelectron spectroscopy of off-stoichiometric Co2MnSi Heusler thin films exhibiting a record TMRh,

J. Phys. D: Appl. Phys., vol. 48, 164002 (12pp), April 2015.

DOI:10.1088/0022-3727/48/16/164002

 

5.       H.-x. Liu, T. Kawami, Kidist Moges, T. Uemura, M. Yamamoto, F. Shi and P. M. Voyles,

gInfluence of film composition in quaternary Heusler alloy Co2(Mn,Fe)Si thin films on tunnelling magnetoresistance of Co2(Mn,Fe)Si/MgO-based magnetic tunnel junctionsh,

J. Phys. D: Appl. Phys., vol. 48, 164001 (9pp), April 2015. (Selected for Highlights of 2015)

DOI:10.1088/0022-3727/48/16/164001

 

6.       R. Fetzer, B. Stadtmüller, Y. Ohdaira, H. Naganuma, M. Oogane, Y. Ando, T. Taira, T. Uemura, M. Yamamoto, M. Aeschlimann, and M. Cinchetti,

gProbing the electronic and spintronic properties of buried interfaces by extremely low energy photoemission spectroscopyh,

Scientific Reports, vol. 5, 8537 (6pp), Feb. 2015.

DOI:10.1038/srep08537

 

7.       A. Yamamoto, Y. Ando, T. Shinjo, T. Uemura, and M. Shiraishi,

gSpin transport and spin conversion in compound semiconductor with non-negligible spin-orbit interactionh,

Phys. Rev. B, vol. 91, 024417 (6pp), January 2015.

DOI: 10.1103/PhysRevB.91.024417

 

2014

1.       T. Ishikura, L.-K. Liefeith, Z. Cui, K. Konishi, K. Yoh, and T. Uemura,

gElectrical spin injection from ferromagnet into an InAs quantum well through a MgO tunnel barrierh

Appl. Phys. Express, vol. 7, 073001 (4pp) (2014)

DOI: 10.7567/APEX.7.073001

 

2.       Y. Ebina, T. Akiho, H.-x. Liu, M. Yamamoto, and T. Uemura

gEffect of CoFe insertion in Co2MnSi/CoFe/n-GaAs junctions on spin injection propertiesh,

Appl. Phys. Lett., vol. 104, 172405 (4pp) (2014)

DOI: 10.1063/1.4873720

 

3.       X. Kozina, J. Karel, S. Ouardi, S. Chadov, G. H. Fecher, C. Felser, G. Stryganyuk, B. Balke, T. Ishikawa, T. Uemura, M. Yamamoto, E. Ikenaga, S. Ueda and K. Kobayashi,

gProbing the electronic states of high-TMR off-stoichiometric Co2MnSi thin films by hard x-ray photoelectron spectroscopyh,

Phys. Rev. B, vol. 89, 125116 (10pp) (2014)

DOI: 10.1103/PhysRevB.89.125116

 

4.       G.-f. Li, Y. Honda, H.-x. Liu, K.-i. Matsuda, M. Arita, T. Uemura, M. Yamamoto, Y. Miura, M. Shirai, T. Saito, F. Shi and P. M. Voyles,

gEffect of nonstoichiometry on the half-metallic character of Co2MnSi investigated through saturation magnetization and tunneling magnetoresistance ratioh,

Phys. Rev. B, vol. 89, 014428 (14pp) (2014)

DOI: 10.1103/PhysRevB.89.014428

 

[Review Paper]

1.       T. Uemura,

gHighly-efficient electrical spin injection into semiconductors using a half-metal spin sourceh (in Japanese),

OYO BUTURI, The Japan Society of Apllied Physics, vol. 83, no. 3, pp. 194-199, March 2014.

 

2013

1.       T. Akiho, J. Shan, H.-x. Liu, K.-i. Matsuda, M. Yamamoto, and T. Uemura,

gElectrical injection of spin-polarized electrons and electrical detection of dynamic nuclear polarization using a Heusler alloy spin sourceh,

Phys. Rev. B, vol. 87, 235205 (7pp) (2013)

DOI: 10.1103/PhysRevB.87.235205

 

2.       R. Fetzer, J.-P. Wüstenberg, T. Taira, T. Uemura, M. Yamamoto, M. Aeschlimann, and M. Cinchetti,

gStructural, chemical, and electronic properties of the Co2MnSi(001)/MgO interfaceh,

Phys. Rev. B, vol. 87, 184418 (7pp) (2013)

DOI: 10.1103/PhysRevB.87.184418

 

3.       Siham Ouardi, G. H. Fecher, S. Chadov, B. Balke, X. Kozina, C. Felser, T. Taira, and M. Yamamoto,

gHard X-ray photoelectron spectroscopy on buried, off-stoichiometric CoxMnyGez (x : z = 2 : 0.38) Heusler thin filmsh, Invited Paper

Applied Physics A: Materials Science & Processing, vol. 111, pp. 395−405 (2013)

DOI: 10.1007/s00339-013-7565-y

 

[Review Paper]

1.       M. Yamamoto,

gSpintronic device applications of half-metallic Heusler alloysh (in Japanese),

Kogyo Zairyo (Engineering Materials), Nikkan Kogyo Simbun, LTD., vol. 60, no. 8, pp. 55-58, August 2013.

 

2012

1.       V. R. Singh, V. K. Verma, K. Ishigami, G. Shibata, T. Kadono, A. Fujimori, D. Asakura, T. Koide, Y. Miura, M. Shirai, G.-f. Li, T. Taira, and M. Yamamoto,

gEffects of off-stoichiometry on the spin polarization at the Co2MnƒĄGe0.38/MgO interfaces: X-ray magnetic circular dichroism studyh,

Phys. Rev. B, vol. 86, 144412 (6pp), October 2012

 

2.       H.-x. Liu, Y. Honda, T. Taira, K.-i. Matsuda, M. Arita, T. Uemura, and M. Yamamoto,

gGiant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by half-metallicity of Co2MnSi and coherent tunnelingh,

Appl. Phys. Lett., vol. 101, 132418 (5pp), September 2012.

 

3.       T. Uemura, K. Kondo, J. Fujisawa, K.-i. Matsuda, and M. Yamamoto,

gCritical effect of spin-dependent transport in a tunnel barrier on enhanced Hanle-type signals observed in three-terminal geometryh,

Appl. Phys. Lett., vol. 101, 132411 (4pp), September 2012.

 

4.       H.-x. Liu, Y. Honda, K.-i. Matsuda, M. Arita, T. Uemura, and M. Yamamoto,

gHighly spin-polarized tunneling in epitaxial magnetic tunnel junctions with a Co2MnSi electrode and a MgO barrier with improved interfacial structural propertiesh,

Jpn. J. Appl. Phys., vol. 51, 093004 (9pp), September 2012.

 

5.       G.-f. Li, T. Taira, H.-x. Liu, K.-i. Matsuda, T. Uemura, and M. Yamamoto,

gFabrication of fully epitaxial CoFe/MgO/CoFe magnetic tunnel junctions on Ge(001) substrates via a MgO interlayerh,

Jpn. J. Appl. Phys., vol. 51, 093003 (5pp), September 2012.

 

6.       A. Gloskovskii, G. Stryganyuk, G. H. Fecher, C. Felser, S.Thiess, H. Schulz-Ritter, W. Drube, G. Berner, M. Sing, R. Claessen, and M. Yamamoto,

gMagnetometry of buried layers - linear magnetic dichroism and spin detection in angular resolved hard X-ray photoelectron spectroscopyh,

Journal of Electron Spectroscopy and Related Phenomena, vol. 185, issue 1-2, pp. 47-52, March 2012.

 

7.       T. Akiho, T. Uemura, M. Harada, K.-i. Matsuda, and M. Yamamoto,

gEffect of MgO Barrier Insertion on Spin-Dependent Transport Properties of CoFe/n-GaAs Heterojunctionsh,

Jpn. J. Appl. Phys. vol. 51, 02BM01 (5pp), February 2012.

 

8.       J.-P. Wüstenberg, R. Fetzer, M. Aeschlimann, M. Cinchetti, J. Minár, Jürgen Braun, H. Ebert, T. Ishikawa, T. Uemura, and M. Yamamoto,

gSurface spin polarization of the nonstoichiometric Heusler alloy Co2MnSih,

Phys. Rev. B, vol. 85, 064407 (10pp), February 2012.

 

2011

1.       T. Uemura, T. Akiho, M. Harada, K.-i. Matsuda, and M. Yamamoto,

gNon-local detection of spin-polarized electrons at room temperature in Co50Fe50/GaAs Schottky tunnel junctionsh,

Appl. Phys. Lett., vol. 99, 082108 (3pp), Aug. 2011.

 

2.       X. Kozina, G. H. Fecher, G. Stryganyuk, S. Ouardi, B. Balke, and C. Felser, G. Schönhense, E. Ikenaga, T. Sugiyama, N. Kawamura, M. Suzuki, T. Taira, T. Uemura, M. Yamamoto, H. Sukegawa, W. H. Wang, K. Inomata, and K. Kobayashi,

gMagnetic dichroism in angle-resolved hard x-ray photoemission from buried layersh,

Phys. Rev. B, vol. 84, 054449 (8pp), Aug. 2011.

 

3.       G.-f. Li, T. Taira, K.-i. Matsuda, M. Arita, T. Uemura, and M. Yamamoto,

gEpitaxial growth of Heusler alloy Co2MnSi/MgO heterostructures on Ge(001) substratesh,

Appl. Phys. Lett., vol. 98, 262505 (3pp), June 2011.

 

4.       T. Akiho, T. Uemura, M. Harada, K.-i. Matsuda, and M. Yamamoto,

gSuppression of in-plane tunneling anisotropic magnetoresistance effect in Co2MnSi/MgO/n-GaAs and CoFe/MgO/n-GaAs junctions by inserting a MgO barrierh,

Appl. Phys. Lett., vol. 98, 232109 (3pp), June 2011.

 

5.       T. Uemura, M. Harada, T. Akiho, K.-i. Matsuda, and M. Yamamoto,
gInfluence of GaAs surface structure on tunneling anisotropic magnetoresistance and magnetocrystalline anisotropy in epitaxial Co50Fe50/n-GaAs junctionsh,
Appl. Phys. Lett., vol. 98, 102503 (3pp), March 2011.

 

2010

1.       S. Imai, K.-i. Matsuda, T. Ishikawa, T. Uemura, and M. Yamamoto, gFabrication and the Transport Properties of NbN/Co2Cr0.6Fe0.4Al/NbN Lateral Junctionsh,

Physica C, vol. 470, S851-S853, Dec. 2010.

 

2.       D. Asakura, T. Koide, S. Yamamoto, K. Tsuchiya, T. Shioya, K. Amemiya, V. R. Singh, T. Kataoka, Y. Yamazaki, Y. Sakamoto, A. Fujimori, T. Taira, and M. Yamamoto,

gMagnetic states of Mn and Co atoms at Co2MnGe/MgO interfaces seen via soft x-ray magnetic circular dichroismh,

Phys. Rev. B, vol. 82, 184419 (8pp), Nov. 2010.

 

3.       T. Uemura, M. Harada, K.-i. Matsuda, and M. Yamamoto,

gInternal electric field influence on tunneling anisotropic magnetoresistance in epitaxial ferromagnet/n-GaAs junctionsh,

Appl. Phys. Lett., vol. 96, 252106 (3pp), June 2010.

 

4.       T. Marukame, T. Ishikawa, T. Taira, K.-i. Matsuda, T. Uemura, and M. Yamamoto,

gGiant Oscillations in Spin-Dependent Tunneling Resistances as a Function of Barrier Thickness in Fully Epitaxial Magnetic Tunnel Junctions with a MgO Barrierh,

Phys. Rev. B, vol. 81, 134432 (5pp), April 2010.

 

5.       T. Saito, T. Katayama, T. Ishikawa, M. Yamamoto, D. Asakura, T. Koide, M. Miura, and M. Shirai,

gInterface Structure of Half-Metallic Heusler Alloy Co2MnSi Thin Films Facing an MgO Tunnel Barrier Determined by X-ray Magnetic Circular Dichroismh,

Phys. Rev. B, vol. 81, 144417 (6pp), April 2010.

 

6.       M. Yamamoto, T. Ishikawa, T. Taira, G.-f. Li, K.-i. Matsuda, and T. Uemura,

gEffect of defects in Heusler alloy thin films on spin-dependent tunnelling characteristics of Co2MnSi/MgO/Co2MnSi and Co2MnGe/MgO/Co2MnGe magnetic tunnel junctionsh,

J. Phys.: Condens. Matter, vol. 22, 164212 (9pp), March 2010.

 

7.       S. Trudel, J. Hamrle, B. Hillebrands, T. Taira, and M. Yamamoto,

gMagneto-optical investigation of epitaxial nonstoichiometric Co2MnGe thin filmsh,

J. Appl. Phys., vol. 107, 043912 (7pp), March 2010.

 

8.       T. M. Nakatani, Y. K. Takahashi, T. Ishikawa, M. Yamamoto, and K. Hono,

gStructural characterizations of Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by transmission electron microscopy,h

J. Magn. Magn. Mater., vol. 322, Issue 3, pp. 357-361, Feb. 2010 (online publication Sept. 2009).

 

[Review Paper]

1.       T. Uemura and M. Yamamoto,
g
Creation and control of spin current using Co-based Heusler alloyh (in Japanese),
Materia Japan, vol. 49, pp. 566-569, Dec. 2010.

 

2009

1.       T. Ishikawa, H.-x. Liu, T. Taira, K.-i. Matsuda, T. Uemura, and M. Yamamoto,

gInfluence of film composition in Co2MnSi electrodes on tunnel magnetoresistance characteristics of Co2MnSi/MgO/Co2MnSi magnetic tunnel junction,h

Appl. Phys. Lett., vol. 95, 232512 (3pp), Dec. 2009.

 

2.       K. Sawada, T. Uemura, M. Masuda, K.-i. Matsuda, and M. Yamamoto,

gTunneling Magnetoresistance Simulation Used to Detect Domain-wall Structures and Their Motion in a Ferromagnetic Wireh,

IEEE Trans. on Magnetics, vol. 45, no. 10, pp. 3780 – 3783, Oct. 2009.

 

3.       T. Uemura, K. Sawada, K.-i. Matsuda, and M. Yamamoto,

gDouble magnetic tunnel junctions with cross-magnetization configurations for electrical detection of domain-wall structuresh,

Appl. Phys. Lett., vol. 95, 012502 (3pp), July 2009.

 

4.       T. Uemura, Y. Imai, M. Harada, K.-i. Matsuda, and M. Yamamoto,

gTunneling anisotropic magnetoresistance in epitaxial CoFe/n-GaAs junctionsh,

Appl. Phys. Lett., vol. 94, 182502 (3pp), May 2009.

 

5.       K.-i. Matsuda, Y. Akimoto, T. Uemura and M. Yamamoto,

gTransport properties of Nb/PdNi bilayers and Nb/PdNi/Nb Josephson junctionsh,

J. Physics: Conference Series, vol. 150, 052155 (4pp), March 2009.

 

6.       T. Taira, T. Ishikawa, N. Itabashi, K.-i. Matsuda, T. Uemura, and M. Yamamoto,

gSpin-dependent tunnelling characteristics of fully epitaxial magnetic tunnel junctions with a Heusler alloy Co2MnGe thin film and a MgO barrierh,

J. Phys. D: Applied Phys., vol. 42, 084015 (9 pp), March 2009.

 

7.       S. Ouardi, B. Balke, A. Gloskovskii, G. H Fecher, C. Felser, G. Schoenhense, T. Ishikawa, T. Uemura, M. Yamamoto, H. Sukegawa, W.-H. Wang, K. Inomata, Y. Yamashita, H. Yoshikawa, S. Ueda and K. Kobayashi,

gHard X-ray photoelectron spectroscopy of buried Heusler compoundsh,

J. Phys. D: Applied Phys., vol. 42, 084010 (7 pp), March 2009.

 

8.       T. Ishikawa, N. Itabashi, T. Taira, K.-i. Matsuda, T. Uemura, and M. Yamamoto,

gHalf-metallic electronic structure of Co2MnSi electrodes in fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions investigated by tunneling spectroscopy (invited)h,

J. Appl. Phys., vol. 105, 07B110 (6pp), March 2009.

 

9.       T. Ishikawa, N. Itabashi, T. Taira, K.-i. Matsuda, T. Uemura, and M. Yamamoto,

gCritical role of interface states for spin-dependent tunneling in half-metallic Co2MnSi-based magnetic tunnel junctions investigated by tunneling spectroscopyh,

Appl. Phys. Lett., vol. 94, 092503 (3pp), March 2009.

 

10.    T. Taira, T. Ishikawa, N. Itabashi, K.-i. Matsuda, T. Uemura, and M. Yamamoto,

gInfluence of annealing on spin-dependent tunneling characteristics of fully epitaxial Co2MnGe/MgO/Co50Fe50 magnetic tunnel junctionsh,

Appl. Phys. Lett., vol. 94, 072510 (3pp), Feb. 2009.

 

2008

1.       T. Uemura and M. Yamamoto,

gThree-valued Magnetic Tunnel Junction for Non-volatile Ternary Content Addressable Memory Applicationh,

J. Appl. Phys., vol. 104, 123911 (5pp), Dec. 2008.

 

2.       M. Masuda, T. Uemura, K.-i. Matsuda and M. Yamamoto,

gFabrication and Characterization of Fully Epitaxial Magnetic Tunnel Junction Field Sensors using a Co2MnSi Thin Filmh,

IEEE Transactions on Magnetics, vol. 44, no.11, pp. 3996 – 3998, Nov. 2008.

 

3.       G. H. Fecher, B. Balke, A. Gloskowskii, S. Ouardi, C. Felser, T. Ishikawa, M. Yamamoto, Y. Yamashita, H. Yoshikawa, S. Ueda, and K. Kobayashi,

gDetection of the valence band in buried Co2MnSi-MgO tunnel junctions by means of photoemission spectroscopyh,

Appl. Phys. Lett., vol. 92, 193513 (3pp), May 2008.

 

4.       T. Uemura, Y. Imai, S. Kawagishi, K.-i. Matsuda, and M. Yamamoto,

gEpitaxial growth and characterization of Co2MnSi thin films on GaAs with MgO interlayerh,

Physica E: Low-dimensional Systems and Nanostructures, vol. 40, no. 6, pp. 2025 – 2027, April 2008.

 

5.       T. Ishikawa, S. Hakamata, K.-i. Matsuda, T. Uemura, and M. Yamamoto,

gFabrication of fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctionsh,

J. Appl. Phys., vol. 103, 07A919 (3pp), April 2008.

 

6.       T. Saito, T. Katayama, A. Emura, N. Sumida, N. Matsuoka, T. Ishikawa, T Uemura, M. Yamamoto, D. Asakura, and T. Koide,

gElectronic and magnetic properties of Heusler alloy Co2MnSi epitaxial ultrathin films facing a MgO barrier studied by X-ray magnetic circular dichroismh,

J. Appl. Phys., vol. 103, 07D712 (3pp), April 2008.

 

7.       K.-i. Matsuda, Y. Akimoto, T. Uemura, and M. Yamamoto,

gMagnetic and transport properties of superconductor/ferromagnetic bilayer microbridgesh,

J. Appl. Phys., vol. 103, 07C711 (3pp), April 2008, and selected for the February 15, 2008 issue of Virtual Journal of Applications of Superconductivity.

 

8.       S. Kawagishi, T. Uemura, Y. Imai, K.-i. Matsuda, and M. Yamamoto,

gStructural, magnetic and electrical properties of Co2MnSi/MgO/n-GaAs tunnel junctionh,

J. Appl. Phys., vol. 103, 07A703 (3pp), April 2008.

 

9.       A. Putra, A. Kakugo, H. Furukawa, J.P. Gong, Y. Osada, T. Uemura and M. Yamamoto,

gProduction of Bacterial Cellulose with Well Oriented Fibril on PDMS Substrateh,

Polymer Journal, vol. 40, no. 2, pp.137-142, Feb. 2008.

 

[Book Chapter]

2.       M. Yamamoto, T. Marukame, T. Ishikawa, K.-i. Matsuda, and T. Uemura,

gHighly Spin-Polarized Tunneling in Fully Epitaxial Magnetic Tunnel Junctions with a Co-Based Full-Heusler Alloy Thin Film and a MgO Barrierh,

Advances in Solid State Physics 47, R. Haug (Ed.), Springer Berlin/Heidelberg, pp. 105-116, Jan. 2008.

 

2007

1.       T. Saito, T. Katayama, T. Ishikawa, M. Yamamoto, D. Asakura, and T. Koide,

gX-ray absorption spectroscopy and x-ray magnetic circular dichroism of epitaxially grown Heusler alloy Co2MnSi ultrathin films facing a MgO barrierh,

Appl. Phys. Lett., vol. 91, 262502 (3pp), Dec. 2007.

 

2.       T. Uemura, T. Yano, K.-i. Matsuda, and M. Yamamoto,

gStructural and magnetic properties of Co2Cr0.6Fe0.4Al thin films epitaxially grown on GaAs substrate with MgO interlayerh,

Thin Solid Films, vol. 515, Issues 20-21, pp. 8013-8016, July 2007.

 

3.       T. Marukame, T. Ishikawa, S. Hakamata, K.-i. Matsuda, T. Uemura, and M. Yamamoto,

gFabrication of Epitaxial Magnetic Tunnel Junctions with a Co2Cr0.6Fe0.4Al Thin Film and Their Tunnel Magnetoresistance Characteristicsh,

J. Magn. Soc. Jpn., vol. 31, no. 4, pp. 344-350, July 2007 (in Japanaese).

 

4.       T. Uemura, T. Marukame, K.-i. Matsuda, and M.Yamamoto,

gFour-state Magnetoresistance in Epitaxial CoFe-based Magnetic Tunnel Junctionh,

IEEE Trans. on Magn., vol. 43, no. 6, pp. 2791-2793, June 2007.

 

5.       T. Marukame, T. Ishikawa, S. Hakamata, K.-i. Matsuda, T. Uemura, and M. Yamamoto,

gFabrication of Fully Epitaxial Co2Cr0.6Fe0.4Al/MgO/Co2Cr0.6Fe0.4Al Magnetic Tunnel Junctionsh,

IEEE Trans. on Magn., vol. 43, no. 6, pp. 2782-2784, June 2007.

 

6.       K.-i. Matsuda, H. Niwa, Y. Akimoto, T. Uemura, and M. Yamamoto,

gMagnetic and Transport Properties of Nb/PdNi Bilayersh,

IEEE Trans. on Appl. Supercond., vol. 17, no. 2, pp. 3529-3532, June 2007.

 

7.       S. Hakamata, T. Ishikawa, T. Marukame, K.-i. Matsuda, T. Uemura, M. Arita, and M. Yamamoto,

gImproved tunnel magnetoresistance characteristics of magnetic tunnel junctions with a Heusler alloy thin film of Co2MnGe and a MgO tunnel barrierh,

J. Appl. Phys., vol. 101, No. 9, 09J513 (3pp), May 2007.

 

8.       T. Marukame and M. Yamamoto,

gTunnel magnetoresistance in fully epitaxial magnetic tunnel junctions with a full-Heusler alloy thin film of Co2Cr0.6Fe0.4Al and a MgO tunnel barrierh,

J. Appl. Phys., vol. 101, 083906 (8pp), April 2007.

 

9.       T. Ishikawa, T. Marukame, S. Hakamata, K.-i. Matsuda, T. Uemura and M. Yamamoto,

gFabrication of exchange-biased epitaxial magnetic tunnel junctions with a Heusler alloy Co2Cr0.6Fe0.4Al thin filmh,

J. Magn. Magn. Mater., vol. 310, Issue 2, Part 3, pp. 1897-1899, March 2007.

 

10.   T. Marukame, H. Kijima, T. Ishikawa, K.-i. Matsuda, T. Uemura and M. Yamamoto,

gSpin-dependent transport properties of fully epitaxial Co2MnSi/MgO/Co50Fe50 tunnel junctionsh,

J. Magn. Magn. Mater., vol. 310, issue 2, part 3, pp. 1946-1948, March 2007.

 

11.   H. Kijima, T. Ishikawa, T. Marukame, K.-i. Matsuda, T. Uemura and M. Yamamoto,

gFabrication of fully epitaxial magnetic tunnel junctions with a Co2MnSi thin film and a MgO tunnel barrierh,

J. Magn. Magn. Mater., vol. 310, issue 2, part 3, pp. 2006-2008 , March 2007.

 

12.   T. Uemura, T. Yano, K.-i. Matsuda, and M. Yamamoto,

gAnalysis of magnetic anisotropy for Co2Cr0.6Fe0.4Al thin films epitaxially grown on GaAs ",

J. Magn. Magn. Mater., vol. 310, issue 2, part 3, pp. e696-e698, March 2007.

 

13.   T. Yano, T. Uemura, K.-i. Matsuda, and M.Yamamoto,

gEffect of a MgO interlayer on the structural and magnetic properties of Co2Cr0.6Fe0.4Al thin films epitaxially grown on GaAsh,

J. Appl. Phys., vol. 101, 063904 (4pp), March 2007.

 

14.   T. Marukame, T. Ishikawa, S. Hakamata, K.-i. Matsuda, T. Uemura, and M. Yamamoto,

gHighly spin-polarized tunneling in fully-epitaxial Co2Cr0.6Fe0.4Al/MgO/Co50Fe50 magnetic tunnel junctions with exchange biasingh,

Appl. Phys. Lett., vol. 90, 012508 (3pp), January 2007.

 

2006

1.       T. Ishikawa, T. Marukame, H. Kijima, K.-i. Matsuda, T. Uemura and M. Yamamoto,

gSpin-dependent tunneling characteristics of fully epitaxial magnetic tunnel junctions with a full-Heusler alloy Co2MnSi thin film and MgO tunnel barrierh,

Appl. Phys. Lett., vol. 89, 192505 (3pp), Nov. 2006, and selected for the November 20, 2006 issue of Virtual Journal of Nanoscale Science & Technology.

 

2.       T. Marukame, T. Ishikawa, W. Sekine, K. Matsuda, T. Uemura, and M. Yamamoto,

gHighly Spin-Polarized Tunneling in Fully-Epitaxial Magnetic Tunnel Junctions using Full-Heusler Alloy Co2Cr0.6Fe0.4Al Thin Film and MgO Tunnel Barrierh,

IEEE Trans. on Magn., vol. 42, no. 10, pp. 2652-2654, Oct. 2006.

 

3.       H. Kijima, T. Ishikawa, T. Marukame, H. Koyama, K. Matsuda, T. Uemura, and M. Yamamoto,

gEpitaxial Growth of Full-Heusler Alloy Co2MnSi Thin Films on MgO-Buffered MgO Substratesh,

IEEE Trans. on Magn., vol. 42, no. 10, pp. 2688-2690, Oct. 2006.

 

4.       T. Ishikawa, T. Marukame, K.-i. Matsuda, T. Uemura, and M. Yamamoto,

gExchange Bias Effect in Full-Heusler Alloy Co2Cr0.6Fe0.4Al Epitaxial Thin Filmsh,

IEEE Trans. on Magn., vol. 42, no.10, pp. 3002-3004, Oct. 2006.

 

5.       T. Marukame, T. Ishikawa, K.-i. Matsuda, T. Uemura, and M. Yamamoto,

gHigh tunnel magnetoresistance in fully epitaxial magnetic tunnel junctions with a full-Heusler alloy Co2Cr0.6Fe0.4Al thin filmh,

Appl. Phys. Lett., vol. 88, 262503 (3pp), June 2006.

 

6.       T. Uemura, R. Miura, T. Yamazuki, T. Sone, K.-i. Matsuda, and M. Yamamoto;

gAnalysis of anisotropic tunnel magneto-resistance of GaMnAs/AlAs/GaMnAs magnetic tunnel junctionh,

Physica E: Low-dimensional Systems and Nanostructures, vol. 32, no. 1-2, May 2006, pp. 383-386.

 

7.       T. Ishikawa, T. Marukame, K. Matsuda, T. Uemura, M. Arita, and M. Yamamoto,

gStructural and magnetic properties of epitaxially grown full-Heusler alloy Co2MnGe thin films deposited using magnetron sputteringh,

J. Appl. Phys., vol. 99, 08J110 (3pp), April 2006.

 

8.       T. Marukame, T. Ishikawa, K. Matsuda, T. Uemura, and M. Yamamoto,

gTunnel magnetoresistance in epitaxial magnetic tunnel junctions using full-Heusler alloy Co2MnGe thin film and MgO tunnel barrierh,

J. Appl. Phys., vol. 99, 08A904 (3pp), April 2006.

 

9.       M. Yamamoto, T. Marukame, T. Ishikawa, K.-i. Matsuda, T Uemura and M Arita;

gFabrication of fully epitaxial magnetic tunnel junctions using cobalt-based full-Heusler alloy thin film and their tunnel magnetoresistance characteristicsh,

J. Phys. D: Appl. Phys., vol. 39, No.5, pp. 824-833, March. 2006.

 

10.   K.-i. Matsuda, T. Kasahara, T. Marukame, T. Uemura and M. Yamamoto;

gEpitaxial growth of Co2Cr0.6Fe0.4Al Heusler alloy thin films on MgO (001) substrates by magnetron sputteringh,

J. Crystal Growth, vol. 286, pp. 389-393, January 2006.

 

2005

1.       T. Uemura, T. Sone, K.-i. Matsuda and M. Yamamoto;

gMagnetic Anisotropy Study for GaMnAs-based Magnetic Tunnel Junctionh,

Jpn. J. Appl. Phys., vol. 44, no. 44, pp. L1352-L1354, Oct. 2005.

 

2.       T. Marukame, T. Kasahara, K.-i. Matsuda, T. Uemura and M. Yamamoto;

gHigh Tunnel Magnetoresistance in Epitaxial Co2Cr0.6Fe0.4Al/MgO/CoFe Tunnel Junctionsh,

IEEE Trans. on Magn., vol. 41, no. 10, pp. 2603-2605, Oct. 2005.

 

3.       T. Kasahara, K.-i. Matsuda, T. Marukame, T. Uemura, and M. Yamamoto,

hEpitaxial Growth of Heusler Alloy Co2Cr0.6Fe0.4Al Thin Films by Magnetron Sputteringh,

J. The Magnetics Society of Japan, vol. 29, no. 9, pp. 895-899, Sept. 2005 (in Japanese).

 

4.       T. Uemura and M. Yamamoto,

gFour-valued magnetic random access memory based on magneto tunnel junction and resonant tunneling diodeh,

J. Multiple-Valued Logic and Soft Computing, vol. 11, no. 5-6, pp. 467-479 (2005).

 

5.       T. Marukame, K. Matsuda, T. Uemura, and M. Yamamoto,

gEpitaxial growth of Fe/MgO/Fe heterostuctures on SrTiO3 (001) substrates by magnetron sputteringh,

Jpn. J. Appl. Phys., vol. 44, no. 8, pp. 6012-6015, Aug. 2005.

 

6.       T. Uemura, K. Sekine, K. Matsuda, and M. Yamamoto,

gMagnetic and Electrical Properties of (La, Sr)MnO3 Sputtered on SrTiO3-buffered Si Substrateh,

Jpn. J. Appl. Phys., vol. 44, no. 4B, pp. 2604-2607, April 2005.

 

7.       T. Marukame, T. Kasahara, K. Matsuda, T. Uemura, and M. Yamamoto,

gFabrication of fully epitaxial magnetic tunnel junctions using full Heusler alloy Co2Cr0.6Fe0.4Al thin film and MgO tunnel barrierh,

Jpn. J. Appl. Phys., vol. 44, no. 17, pp. L521-524, April 2005.

 

2004

1.       T. Uemura, S. Honma, T. Marukame, and M. Yamamoto,

gNovel MRAM Cell Consisting of Magneto-Tunnel Junction Connected in Parallel with Negative Differential Resistanceh,

Jpn. J. Appl. Phys., vol. 43, no. 4B, pp. 2114-2117, April 2004.

 

2.       K. Uesugi, M. Kurimoto, I. Suemune, M. Yamamoto, T. Uemura, H. Machida and N. Shimoyama;

gObservation of Clear Negative Differential Resistance Characteristics in GaAsNSe/GaAs and GaAsNSb/GaAs Multiple Quantum Wells at Room Temperature,

Physica E, vol.21, No. 2-4, pp. 727-731, March 2004.

 

3.       T. Uemura, S. Honma, T. Marukame, and M. Yamamoto,

gLarge Enhancement of Tunneling Magneto-resistance Ratio in Magnetic Tunnel Junction Connected in Series with Tunnel Diodeh,

Jpn. J. Appl. Phys. vol. 43, No. 1AB, pp. L44 - L46, January 2004.

 

2003

1.       T. Uemura, S. Honma, T. Marukame, and M. Yamamoto,

gProposal and experimental demonstration of magnetic tunnel junction connected in parallel with tunnel diodeh,

Electronics Lett., vol. 39, no. 21, pp. 1549-1551, Oct. 2003.

 

2.       T. Uemura, T. Marukame, and M. Yamamoto,

gProposal and Analysis of a Ferromagnetic Triple-Barrier Resonant-Tunneling Spin Filterh,

IEEE Trans. on Magnetics, vol. 39, no. 5, pp. 2809-2811, September, 2003.