List of
Publications: Reviewed Journal Papers
Feb. 9, 2021
Laboratory
of Nanoscale Electron Devices
Division of Electronics
for Informatics
Graduate School of Information Science and Technology
Hokkaido University
Published
2021
1.
K.
Jono, F. Shimohashi, M. Yamanouchi and T. Uemura,
�gSpin–orbit torque induced
magnetization switching for an ultrathin MnGa/Co2MnSi bilayer�h
AIP Advances vol. 11,
025205(5pp), 2021.
DOI:10.1063/5.0032732
2020
1. T. Li,
W. Yan, X. Zhang, B. Hu, K. Moges,T. Uemura, M. Yamamoto, M. Tsujikawa, M.
Shirai, and Y. Miura,
�gOff-stoichiometry
effect on magnetic damping in thin films of Heusler alloy Co2MnSi�h,
Phys.
Rev. B vol. 101, 174410(12pp), 2020.
DOI:
10.1103/PhysRevB.101.174410
2019
1.
M. Yamanouchi, N. V. Bao, F. Shimohashi, K.
Jono, M.Inoue, and T. Uemura
�gMagnetic
properties and spin-orbit-torque-induced magnetization switching in Ta/MnGa
grown on Cr and NiAl buffer layers�h
AIP Advances,
vol.9, 125245 (4pp), December 2019.
DOI:
10.1063/1.5129300
2.
M. Yamanouchi, N. V. Bao, M.Inoue, and T.
Uemura
�gInteraction
between spin-orbit-torque and domain walls in a Ta/MnGa/NiAl structure�h
Jpn. J.
Appl. Phys. vol.58, 100903 (4pp), September 2019.
DOI: 10.7567/1347-4065/ab3e79
3.
M. Inoue, K. Inubushi, D.Mouri, T.
Tanimoto, K. Nakada, K. Kondo, M. Yamamoto, and T. Uemura
�gOrigin of
biquadratic interlayer exchange coupling in Co2MnSi-based
current-perpendicular-to-plane pseudo spin valves�h
Appl. Phys. Lett. vol.
114, 062401 (5pp), February 2019.
DOI: 10.1063/1.5082605
4.
Z. Lin, D. Pan. M. Rasly, and T.Uemura
�gElectrical spin
injection into AlGaAs/GaAs-based two-dimensional electron gas systems with Co2MnSi
spin source up to room temperature�h
Appl. Phys. Lett. vol.
114, 012405 (5pp), January 2019.
DOI: 10.1063/1.5077027
2017
1.
M. Rasly, Z. Lin, and T. Uemura
�gSystematic investigations of
transient response of nuclear spins in the presence of polarized electrons�h
Phys. Rev. B vol. 96,
184415 (8pp), Nov. 2017.
DOI:
10.1103/PhysRevB.96.184415.
2.
M. Inoue, B. Hu, K. Moges, K. Inubushi, K. Nakada, M. Yamamoto,
and T. Uemura
�gInfluence of off-stoichiometry
on magnetoresisitance characteristics of Co2MnSi/Ag-based
current-perpendicular-to-plane spin valves�h,
Appl. Phys. Lett. vol.
111, 082403 (5pp), August 2017.
DOI: 10.1063/1.5000244
3.
Z. Lin, M. Rasly, and T. Uemura,
�gElectrical detection of nuclear spin-echo
signals in an electron spin injection system�h,
Appl.
Phys. Lett. Vol. 110, 232404 (4pp), June 2017.
DOI: 10.1063/1.4985650
2016
1. B. Hu, K.
Moges, Y. Honda, H.-x. Liu, T. Uemura, M. Yamamoto, J. Inoue, and M. Shirai,
�gTemperature
dependence of spin-dependent tunneling conductance of magnetic tunnel junctions
with half-metallic Co2MnSi electrodes�h,
Phys. Rev. B, vol. 94, 094428 (15pp), September 2016.
DOI: 10.1103/PhysRevB.94.094428
2. T.
Uemura, T. Akiho, Y. Ebina, and M. Yamamoto
�gCoherent
manipulation of nuclear spins using spin injection from a half-metallic spin
source�h
Proc. of SPIE, vol 9931, pp.99311L-1 – 99311L-7, September 2016. (Invited paper)
DOI: 10.1117/12.2238793
3. L. Li,
I. Lee, D. Lim, S. Rathi, M. Kang, T. Uemura, and G.-H. Kim,
�gSpin diffusion
and non-local spin-valve effect in an exfoliated multilayer graphene with a Co
electrode�h,
Nanotechnology,
vol. 27, 335201 (6pp), July 2016.
DOI:10.1088/0957-4484/27/33/335201
4. X.
Kozina, E. Ikenaga, C. E. V. Barbosa, S. Ouardi, J. Karel, M. Yamamoto, K.
Kobayashi, H. J. Elmers, G. Schönhense, and C. Felser,
�gDevelopment
of hard X-ray photoelectron SPLEED-based spectrometer applicable for probing of
buried magnetic layer valence states�h,
Journal of Electron Spectroscopy and Related Phenomena, vol. 21,
pp. 12-18, May 2016.
DOI: 10.1016/j.elspec.2016.05.001
5. R.
Fetzer, H.-x. Liu, B. Stadtmüller, T. Uemura,M. Yamamoto, M. Aeschlimann and M.
Cinchetti,
�gImpact of CoFe
buffer layers on the structural and electronic properties of the Co2MnSi/MgO
interface�h,
J.
Phys. D: Appl. Phys. vol. 49, 195002 (5pp), April 2016.
DOI: 10.1088/0022-3727/49/19/195002
6.
K. Moges, Y. Honda, H.-x. Liu, T. Uemura,
M. Yamamoto, Y. Miura, and M. Shirai,
�gEnhanced
half-metallicity of off-stoichiometric quaternary Heusler alloy Co2(Mn,Fe)Si
investigated through saturation magnetization and tunneling magnetoresistance�h,
Phys.
Rev. B. vol. 93, 134403 (15pp), April 2016.
DOI:
10.1103/PhysRevB.93.134403
7.
Z. Lin, K. Kondo, M. Yamamoto, and T.
Uemura,
�gTransient
analysis of oblique Hanle signals observed in GaAs�h,
Jpn. J.
Appl. Phys. 55, 04EN03 (5pp), March, 2016.
DOI: 10.7567/JJAP.55.04EN03
8.
M. Rasly, Z. Lin, M. Yamamoto, and T.
Uemura,
�gAnalysis of the
transient response of nuclear spins in GaAs with/without nuclear magnetic
resonance�h,
AIP
Advances 6, 056305 (8pp), March, 2016.
DOI:
10.1063/1.4943610
9.
T. Miyakawa, T. Akiho, Y. Ebina, M.
Yamamoto, and T. Uemura,
�gEfficient gate
control of spin-valve signals and Hanle signals in GaAs channel with p-i-n
junction-type back-gate structure�h,
Appl.
Phys. Express 9, 023103 (4pp),
January, 2016. (Selected for Spotlights)
DOI: 10.7567/APEX.9.023103
[Book
Chapter]
1. M.
Yamamoto and T. Uemura,
�gEffect of
Nonstoichiometry on the Half-Metallic Character of Co2MnSi and Its
Application to the Spin Sources of Spintronic Devices�h,
Heusler
Alloys, C. Felser and A. Hirohata (Eds.), Springer International Publishing
Switzerland 2016, Chap. 18, pp. 413-444, Jan. 2016.
DOI:
10.1007/978-3-319-21449-8_20
2015
1. T. Akiho, M. Yamamoto, and T.
Uemura,
�gInvestigation of spin lifetime in strained InxGa1-xAs channels through
all-electrical spin injection and detection�h,
Appl.
Phys. Express 8, 093001 (4pp),
August, 2015
DOI: 10.7567/APEX.8.093001
2. V. R. Singh, V. K. Verma, K. Ishigami, G.
Shibata, A. Fujimori, T. Koide, Y. Miura, M. Shirai, T. Ishikawa,
G.-f. Li, and M. Yamamoto,
�gElectronic and magnetic properties of
off-stoichiometric Co2MnƒÀSi/MgO interfaces studied by x-ray magnetic circular dichroism�h
J. Appl. Phys. vol. 117,
203901 (6pp), May 2015.
DOI: 10.1063/1.4921538
3. T. Uemura, T. Akiho, Y. Ebina, and M. Yamamoto,
�gCoherent manipulation
of nuclear spins using spin injection from a half-metallic spin source�h,
Phys.
Rev. B, vol. 91, 140410(R) (5pp), April 2015.
DOI:
10.1103/PhysRevB.91.140410
4. R. Fetzer, S. Ouardi, Y. Honda, H.-x. Liu, S. Chadov, B. Balke, S. Ueda,
M. Suzuki, T. Uemura, M. Yamamoto, M. Aeschlimann, M. Cinchetti, G. H. Fecher,
and C. Felser,
�gSpin-resolved
low-energy and hard X-ray photoelectron spectroscopy of
off-stoichiometric Co2MnSi Heusler thin films
exhibiting a record TMR�h,
J. Phys. D:
Appl. Phys., vol. 48, 164002 (12pp), April 2015.
DOI:10.1088/0022-3727/48/16/164002
5.
H.-x. Liu, T.
Kawami, Kidist Moges, T. Uemura, M. Yamamoto, F. Shi and P. M. Voyles,
�gInfluence of film
composition in quaternary Heusler alloy Co2(Mn,Fe)Si thin films on
tunnelling magnetoresistance of Co2(Mn,Fe)Si/MgO-based magnetic
tunnel junctions�h,
J. Phys. D:
Appl. Phys., vol. 48, 164001 (9pp), April 2015. (Selected for Highlights of 2015)
DOI:10.1088/0022-3727/48/16/164001
6.
R. Fetzer, B. Stadtmüller, Y. Ohdaira, H.
Naganuma, M. Oogane, Y. Ando, T. Taira, T. Uemura, M. Yamamoto, M. Aeschlimann,
and M. Cinchetti,
�gProbing
the electronic and spintronic properties of buried interfaces by extremely low
energy photoemission spectroscopy�h,
Scientific Reports, vol. 5, 8537 (6pp), Feb. 2015.
DOI:10.1038/srep08537
7.
A. Yamamoto, Y. Ando, T. Shinjo, T. Uemura,
and M. Shiraishi,
�gSpin
transport and spin conversion in compound semiconductor with non-negligible
spin-orbit interaction�h,
Phys. Rev. B, vol. 91, 024417 (6pp), January 2015.
DOI: 10.1103/PhysRevB.91.024417
2014
1.
T. Ishikura, L.-K. Liefeith, Z. Cui, K. Konishi,
K. Yoh, and T. Uemura,
�gElectrical spin
injection from ferromagnet into an InAs quantum well through a MgO tunnel
barrier�h
Appl.
Phys. Express, vol. 7, 073001 (4pp) (2014)
DOI: 10.7567/APEX.7.073001
2.
Y. Ebina, T. Akiho, H.-x. Liu, M.
Yamamoto, and T. Uemura
�gEffect of CoFe
insertion in Co2MnSi/CoFe/n-GaAs junctions on spin injection properties�h,
Appl.
Phys. Lett., vol. 104, 172405 (4pp) (2014)
DOI:
10.1063/1.4873720
3.
X. Kozina, J.
Karel, S.
Ouardi, S.
Chadov, G. H.
Fecher, C.
Felser, G. Stryganyuk, B. Balke, T. Ishikawa, T. Uemura, M. Yamamoto, E. Ikenaga, S. Ueda and K. Kobayashi,
�gProbing the electronic states of high-TMR off-stoichiometric Co2MnSi
thin films by hard x-ray photoelectron spectroscopy�h,
Phys.
Rev. B, vol. 89, 125116 (10pp) (2014)
DOI:
10.1103/PhysRevB.89.125116
4.
G.-f. Li, Y. Honda, H.-x. Liu,
K.-i. Matsuda, M. Arita, T. Uemura, M. Yamamoto, Y. Miura, M. Shirai, T. Saito, F. Shi
and P. M. Voyles,
�gEffect of nonstoichiometry on the half-metallic
character of Co2MnSi investigated through saturation magnetization
and tunneling magnetoresistance ratio�h,
Phys. Rev. B, vol. 89, 014428 (14pp) (2014)
DOI:
10.1103/PhysRevB.89.014428
[Review
Paper]
1.
T. Uemura,
�gHighly-efficient electrical
spin injection into semiconductors using a half-metal spin source�h (in
Japanese),
OYO BUTURI, The
Japan Society of Apllied Physics, vol. 83, no. 3, pp. 194-199, March 2014.
2013
1.
T. Akiho, J. Shan, H.-x. Liu, K.-i. Matsuda, M. Yamamoto, and T. Uemura,
�gElectrical injection of
spin-polarized electrons and electrical detection of dynamic nuclear polarization using a
Heusler alloy spin source�h,
Phys. Rev. B, vol. 87, 235205 (7pp) (2013)
DOI:
10.1103/PhysRevB.87.235205
2.
R. Fetzer, J.-P. Wüstenberg, T. Taira, T.
Uemura, M. Yamamoto, M. Aeschlimann, and M. Cinchetti,
�gStructural,
chemical, and electronic properties of the Co2MnSi(001)/MgO
interface�h,
Phys. Rev. B, vol. 87, 184418 (7pp) (2013)
DOI: 10.1103/PhysRevB.87.184418
3.
Siham Ouardi, G. H. Fecher, S. Chadov, B.
Balke, X. Kozina, C. Felser, T. Taira, and M. Yamamoto,
�gHard
X-ray photoelectron spectroscopy on buried, off-stoichiometric CoxMnyGez (x : z = 2 : 0.38) Heusler thin films�h, Invited Paper
Applied Physics
A: Materials Science & Processing, vol. 111, pp. 395−405 (2013)
DOI: 10.1007/s00339-013-7565-y
[Review
Paper]
1.
M. Yamamoto,
�gSpintronic device applications
of half-metallic Heusler alloys�h (in Japanese),
Kogyo Zairyo (Engineering
Materials), Nikkan Kogyo Simbun, LTD., vol. 60, no. 8, pp. 55-58, August 2013.
2012
1. V. R. Singh, V. K. Verma,
K. Ishigami, G. Shibata, T. Kadono, A. Fujimori, D. Asakura, T. Koide, Y.
Miura, M. Shirai, G.-f. Li, T. Taira, and M. Yamamoto,
�gEffects
of off-stoichiometry on the spin polarization at the Co2MnƒÀGe0.38/MgO
interfaces: X-ray magnetic circular dichroism study�h,
Phys. Rev. B, vol. 86, 144412 (6pp), October 2012
2. H.-x. Liu, Y. Honda,
T.
Taira, K.-i. Matsuda, M.
Arita, T. Uemura, and M. Yamamoto,
�gGiant tunneling
magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi
magnetic tunnel junctions by half-metallicity of Co2MnSi and
coherent tunneling�h,
Appl.
Phys. Lett., vol. 101, 132418 (5pp), September 2012.
3.
T. Uemura, K. Kondo, J. Fujisawa, K.-i.
Matsuda, and M. Yamamoto,
�gCritical effect
of spin-dependent transport in a tunnel barrier on enhanced Hanle-type signals
observed in three-terminal geometry�h,
Appl.
Phys. Lett., vol. 101, 132411 (4pp), September 2012.
4. H.-x. Liu, Y. Honda,
K.-i. Matsuda, M. Arita, T. Uemura, and M. Yamamoto,
�gHighly spin-polarized tunneling in epitaxial magnetic tunnel junctions with a Co2MnSi
electrode and a MgO barrier with improved interfacial structural properties�h,
Jpn. J.
Appl. Phys., vol. 51, 093004 (9pp), September 2012.
5. G.-f.
Li, T. Taira, H.-x. Liu, K.-i. Matsuda,
T. Uemura, and M. Yamamoto,
�gFabrication of
fully epitaxial CoFe/MgO/CoFe magnetic tunnel junctions on Ge(001) substrates
via a MgO interlayer�h,
Jpn. J.
Appl. Phys., vol. 51, 093003 (5pp), September 2012.
6. A. Gloskovskii, G. Stryganyuk, G. H. Fecher, C. Felser,
S.Thiess, H. Schulz-Ritter, W. Drube, G. Berner, M. Sing, R. Claessen, and M.
Yamamoto,
�gMagnetometry of buried layers - linear magnetic dichroism and spin
detection in angular resolved hard X-ray photoelectron spectroscopy�h,
Journal of Electron Spectroscopy and Related Phenomena,
vol. 185, issue 1-2, pp. 47-52, March 2012.
7.
T. Akiho,
T. Uemura, M. Harada, K.-i. Matsuda, and M. Yamamoto,
�gEffect of MgO Barrier Insertion on Spin-Dependent Transport Properties of
CoFe/n-GaAs Heterojunctions�h,
Jpn. J. Appl. Phys. vol. 51, 02BM01 (5pp), February 2012.
8.
J.-P. Wüstenberg, R.
Fetzer, M. Aeschlimann, M. Cinchetti, J. Minár, Jürgen Braun, H. Ebert, T.
Ishikawa, T. Uemura, and M. Yamamoto,
�gSurface spin polarization of the nonstoichiometric
Heusler alloy Co2MnSi�h,
Phys.
Rev. B, vol. 85, 064407 (10pp), February 2012.
2011
1.
T.
Uemura, T.
Akiho, M. Harada, K.-i. Matsuda, and M. Yamamoto,
�gNon-local detection of spin-polarized electrons at room temperature in Co50Fe50/GaAs
Schottky tunnel junctions�h,
Appl. Phys. Lett., vol. 99, 082108 (3pp), Aug. 2011.
2.
X. Kozina, G. H. Fecher, G. Stryganyuk, S. Ouardi, B. Balke, and C. Felser, G. Schönhense, E. Ikenaga, T. Sugiyama, N. Kawamura, M. Suzuki, T. Taira, T. Uemura, M. Yamamoto, H. Sukegawa, W. H. Wang, K. Inomata, and K. Kobayashi,
�gMagnetic
dichroism in angle-resolved hard x-ray photoemission from buried layers�h,
Phys.
Rev. B, vol. 84, 054449 (8pp), Aug. 2011.
3.
G.-f. Li, T. Taira, K.-i. Matsuda, M.
Arita, T. Uemura, and M. Yamamoto,
�gEpitaxial
growth of Heusler alloy Co2MnSi/MgO heterostructures on Ge(001)
substrates�h,
Appl.
Phys. Lett., vol. 98, 262505 (3pp), June 2011.
4.
T. Akiho, T. Uemura, M. Harada, K.-i. Matsuda, and M. Yamamoto,
�gSuppression of in-plane tunneling
anisotropic magnetoresistance effect in Co2MnSi/MgO/n-GaAs and
CoFe/MgO/n-GaAs junctions by inserting a MgO barrier�h,
Appl.
Phys. Lett., vol. 98, 232109 (3pp), June 2011.
5.
T. Uemura, M. Harada, T. Akiho, K.-i.
Matsuda, and M. Yamamoto,
�gInfluence of GaAs surface structure on tunneling anisotropic magnetoresistance
and magnetocrystalline anisotropy in epitaxial Co50Fe50/n-GaAs
junctions�h,
Appl.
Phys. Lett., vol. 98, 102503 (3pp), March 2011.
2010
1.
S. Imai, K.-i. Matsuda, T. Ishikawa, T.
Uemura, and M. Yamamoto, �gFabrication and the Transport Properties of NbN/Co2Cr0.6Fe0.4Al/NbN
Lateral Junctions�h,
Physica
C, vol. 470, S851-S853, Dec. 2010.
2.
D. Asakura, T. Koide, S. Yamamoto, K.
Tsuchiya, T. Shioya, K. Amemiya, V. R. Singh, T. Kataoka, Y. Yamazaki, Y.
Sakamoto, A. Fujimori, T. Taira, and M. Yamamoto,
�gMagnetic states of Mn and Co atoms at Co2MnGe/MgO
interfaces seen via soft x-ray magnetic circular dichroism�h,
Phys.
Rev. B, vol. 82, 184419 (8pp), Nov. 2010.
3. T. Uemura, M. Harada, K.-i. Matsuda, and M. Yamamoto,
�gInternal electric field influence on
tunneling anisotropic magnetoresistance in epitaxial ferromagnet/n-GaAs
junctions�h,
Appl.
Phys. Lett., vol. 96, 252106 (3pp), June 2010.
4.
T. Marukame, T. Ishikawa, T. Taira, K.-i. Matsuda, T. Uemura, and M. Yamamoto,
�gGiant
Oscillations in Spin-Dependent Tunneling Resistances as a Function of Barrier
Thickness in Fully Epitaxial Magnetic Tunnel Junctions with a MgO Barrier�h,
Phys.
Rev. B, vol. 81, 134432 (5pp), April 2010.
5.
T. Saito, T. Katayama, T.
Ishikawa, M. Yamamoto, D. Asakura, T. Koide, M. Miura, and M. Shirai,
�gInterface
Structure of Half-Metallic Heusler Alloy Co2MnSi Thin Films Facing
an MgO Tunnel Barrier Determined by X-ray Magnetic Circular Dichroism�h,
Phys.
Rev. B, vol. 81, 144417 (6pp), April 2010.
6.
M. Yamamoto, T. Ishikawa, T. Taira,
G.-f. Li, K.-i. Matsuda, and T. Uemura,
�gEffect
of defects in Heusler alloy thin films on spin-dependent tunnelling
characteristics of Co2MnSi/MgO/Co2MnSi and Co2MnGe/MgO/Co2MnGe
magnetic tunnel junctions�h,
J.
Phys.: Condens. Matter, vol. 22, 164212 (9pp), March 2010.
7.
S. Trudel, J. Hamrle, B.
Hillebrands, T. Taira, and M. Yamamoto,
�gMagneto-optical
investigation of epitaxial nonstoichiometric Co2MnGe thin films�h,
J.
Appl. Phys., vol. 107, 043912 (7pp), March 2010.
8. T. M. Nakatani, Y. K. Takahashi, T. Ishikawa, M. Yamamoto, and K.
Hono,
�gStructural
characterizations of Co2MnSi/MgO/Co2MnSi magnetic tunnel
junctions by transmission electron microscopy,�h
J.
Magn. Magn. Mater., vol. 322, Issue 3,
pp. 357-361, Feb. 2010 (online publication Sept. 2009).
[Review
Paper]
1.
T. Uemura and M. Yamamoto,
�gCreation and control of spin current using
Co-based Heusler alloy�h
(in Japanese),
Materia Japan, vol. 49, pp. 566-569, Dec. 2010.
2009
1. T. Ishikawa, H.-x. Liu, T. Taira, K.-i. Matsuda, T.
Uemura, and M. Yamamoto,
�gInfluence of film composition in Co2MnSi electrodes on tunnel
magnetoresistance characteristics of Co2MnSi/MgO/Co2MnSi
magnetic tunnel junction,�h
Appl.
Phys. Lett., vol. 95, 232512 (3pp), Dec. 2009.
2.
K. Sawada, T.
Uemura, M. Masuda, K.-i. Matsuda, and M. Yamamoto,
�gTunneling Magnetoresistance Simulation Used to Detect Domain-wall
Structures and Their Motion in a Ferromagnetic Wire�h,
IEEE Trans. on Magnetics, vol. 45, no. 10, pp. 3780
– 3783, Oct. 2009.
3.
T. Uemura, K. Sawada, K.-i. Matsuda, and
M. Yamamoto,
�gDouble magnetic
tunnel junctions with cross-magnetization configurations for electrical
detection of domain-wall structures�h,
Appl.
Phys. Lett., vol. 95, 012502 (3pp), July
2009.
4.
T. Uemura, Y. Imai,
M. Harada, K.-i. Matsuda, and M. Yamamoto,
�gTunneling
anisotropic magnetoresistance in epitaxial CoFe/n-GaAs junctions�h,
Appl.
Phys. Lett., vol. 94, 182502 (3pp), May
2009.
5.
K.-i. Matsuda, Y.
Akimoto, T. Uemura and M. Yamamoto,
�gTransport
properties of Nb/PdNi bilayers and Nb/PdNi/Nb Josephson junctions�h,
J.
Physics: Conference Series, vol. 150, 052155 (4pp), March 2009.
6.
T. Taira, T.
Ishikawa, N. Itabashi, K.-i. Matsuda, T. Uemura, and M. Yamamoto,
�gSpin-dependent tunnelling characteristics of fully epitaxial magnetic
tunnel junctions with a Heusler alloy Co2MnGe thin film and a MgO
barrier�h,
J. Phys. D: Applied Phys., vol. 42, 084015 (9 pp), March
2009.
7.
S. Ouardi, B. Balke, A. Gloskovskii, G. H
Fecher, C. Felser, G. Schoenhense, T. Ishikawa, T. Uemura, M. Yamamoto, H.
Sukegawa, W.-H. Wang, K. Inomata, Y. Yamashita, H. Yoshikawa, S. Ueda and K.
Kobayashi,
�gHard X-ray photoelectron spectroscopy of
buried Heusler compounds�h,
J. Phys. D: Applied Phys., vol. 42, 084010 (7 pp), March
2009.
8.
T. Ishikawa, N.
Itabashi, T. Taira, K.-i. Matsuda, T. Uemura, and M. Yamamoto,
�gHalf-metallic
electronic structure of Co2MnSi electrodes in fully epitaxial Co2MnSi/MgO/Co2MnSi
magnetic tunnel junctions investigated by tunneling spectroscopy (invited)�h,
J. Appl. Phys., vol. 105, 07B110
(6pp), March 2009.
9.
T. Ishikawa, N.
Itabashi, T. Taira, K.-i. Matsuda, T. Uemura, and M. Yamamoto,
�gCritical role of interface states for spin-dependent tunneling in
half-metallic Co2MnSi-based magnetic tunnel junctions investigated
by tunneling spectroscopy�h,
Appl. Phys. Lett., vol.
94, 092503 (3pp), March 2009.
10.
T. Taira, T.
Ishikawa, N. Itabashi, K.-i. Matsuda, T. Uemura, and M. Yamamoto,
�gInfluence of annealing on spin-dependent tunneling characteristics of
fully epitaxial Co2MnGe/MgO/Co50Fe50 magnetic
tunnel junctions�h,
Appl. Phys. Lett., vol.
94, 072510 (3pp), Feb. 2009.
2008
1.
T. Uemura and M. Yamamoto,
�gThree-valued
Magnetic Tunnel Junction for Non-volatile Ternary Content Addressable Memory
Application�h,
J.
Appl. Phys., vol. 104, 123911 (5pp), Dec. 2008.
2.
M. Masuda, T. Uemura, K.-i. Matsuda and M.
Yamamoto,
�gFabrication
and Characterization of Fully Epitaxial Magnetic Tunnel Junction Field Sensors
using a Co2MnSi Thin Film�h,
IEEE
Transactions on Magnetics, vol. 44, no.11, pp. 3996 – 3998, Nov. 2008.
3.
G. H. Fecher, B. Balke, A. Gloskowskii, S.
Ouardi, C. Felser, T. Ishikawa, M. Yamamoto, Y. Yamashita,
H. Yoshikawa, S. Ueda, and K. Kobayashi,
�gDetection of the
valence band in buried Co2MnSi-MgO tunnel junctions by means of
photoemission spectroscopy�h,
Appl.
Phys. Lett., vol. 92, 193513 (3pp), May 2008.
4.
T. Uemura, Y. Imai, S. Kawagishi, K.-i.
Matsuda, and M. Yamamoto,
�gEpitaxial growth
and characterization of Co2MnSi thin films on GaAs with MgO
interlayer�h,
Physica
E: Low-dimensional Systems and Nanostructures, vol. 40, no. 6, pp. 2025 – 2027,
April 2008.
5. T. Ishikawa, S. Hakamata, K.-i. Matsuda, T.
Uemura, and M. Yamamoto,
�gFabrication of
fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel
junctions�h,
J.
Appl. Phys., vol. 103, 07A919 (3pp), April 2008.
6. T.
Saito, T. Katayama, A. Emura, N. Sumida, N. Matsuoka,
T. Ishikawa, T Uemura, M. Yamamoto, D. Asakura, and T. Koide,
�gElectronic and magnetic properties of Heusler
alloy Co2MnSi epitaxial ultrathin films facing a MgO barrier studied
by X-ray magnetic circular dichroism�h,
J.
Appl. Phys., vol. 103, 07D712 (3pp), April 2008.
7. K.-i.
Matsuda, Y. Akimoto, T. Uemura, and M. Yamamoto,
�gMagnetic and
transport properties of superconductor/ferromagnetic bilayer microbridges�h,
J.
Appl. Phys., vol. 103, 07C711 (3pp), April 2008, and selected for the February 15, 2008 issue of Virtual
Journal of Applications of Superconductivity.
8.
S. Kawagishi, T. Uemura, Y. Imai, K.-i.
Matsuda, and M. Yamamoto,
�gStructural,
magnetic and electrical properties of Co2MnSi/MgO/n-GaAs tunnel
junction�h,
J.
Appl. Phys., vol. 103, 07A703 (3pp), April 2008.
9.
A. Putra, A. Kakugo, H. Furukawa, J.P.
Gong, Y. Osada, T. Uemura and M. Yamamoto,
�gProduction of
Bacterial Cellulose with Well Oriented Fibril on PDMS Substrate�h,
Polymer
Journal, vol. 40, no. 2, pp.137-142, Feb. 2008.
[Book
Chapter]
2.
M. Yamamoto, T. Marukame, T. Ishikawa,
K.-i. Matsuda, and T. Uemura,
�gHighly
Spin-Polarized Tunneling in Fully Epitaxial Magnetic Tunnel Junctions with a
Co-Based Full-Heusler Alloy Thin Film and a MgO Barrier�h,
Advances in Solid State Physics 47, R. Haug (Ed.), Springer
Berlin/Heidelberg, pp. 105-116, Jan. 2008.
2007
1.
T. Saito, T. Katayama, T. Ishikawa, M.
Yamamoto, D. Asakura, and T. Koide,
�gX-ray absorption spectroscopy and x-ray magnetic circular
dichroism of epitaxially grown Heusler alloy Co2MnSi ultrathin films
facing a MgO barrier�h,
Appl.
Phys. Lett., vol. 91, 262502 (3pp), Dec. 2007.
2.
T. Uemura, T. Yano, K.-i. Matsuda, and M.
Yamamoto,
�gStructural and
magnetic properties of Co2Cr0.6Fe0.4Al thin films
epitaxially grown on GaAs substrate with MgO interlayer�h,
Thin
Solid Films, vol. 515, Issues 20-21, pp. 8013-8016, July 2007.
3.
T. Marukame, T. Ishikawa, S. Hakamata,
K.-i. Matsuda, T. Uemura, and M. Yamamoto,
�gFabrication of
Epitaxial Magnetic Tunnel Junctions with a Co2Cr0.6Fe0.4Al
Thin Film and Their Tunnel Magnetoresistance Characteristics�h,
J. Magn. Soc. Jpn., vol. 31, no. 4, pp.
344-350, July 2007 (in Japanaese).
4. T.
Uemura, T. Marukame, K.-i. Matsuda, and M.Yamamoto,
�gFour-state
Magnetoresistance in Epitaxial CoFe-based Magnetic Tunnel Junction�h,
IEEE
Trans. on Magn., vol. 43, no. 6, pp. 2791-2793, June 2007.
5. T.
Marukame, T. Ishikawa, S. Hakamata, K.-i. Matsuda, T. Uemura, and M. Yamamoto,
�gFabrication
of Fully Epitaxial Co2Cr0.6Fe0.4Al/MgO/Co2Cr0.6Fe0.4Al
Magnetic Tunnel Junctions�h,
IEEE
Trans. on Magn., vol. 43, no. 6, pp. 2782-2784, June 2007.
6.
K.-i. Matsuda, H. Niwa, Y. Akimoto, T.
Uemura, and M. Yamamoto,
�gMagnetic and
Transport Properties of Nb/PdNi Bilayers�h,
IEEE
Trans. on Appl. Supercond., vol. 17, no. 2, pp. 3529-3532, June 2007.
7. S.
Hakamata, T. Ishikawa, T. Marukame, K.-i. Matsuda, T. Uemura, M. Arita, and M.
Yamamoto,
�gImproved
tunnel magnetoresistance characteristics of magnetic tunnel junctions with a
Heusler alloy thin film of Co2MnGe and a MgO tunnel barrier�h,
J. Appl. Phys., vol. 101, No. 9, 09J513 (3pp), May 2007.
8. T.
Marukame and M. Yamamoto,
�gTunnel
magnetoresistance in fully epitaxial magnetic tunnel junctions with a
full-Heusler alloy thin film of Co2Cr0.6Fe0.4Al
and a MgO tunnel barrier�h,
J. Appl. Phys., vol. 101, 083906 (8pp), April 2007.
9. T.
Ishikawa, T. Marukame, S. Hakamata, K.-i. Matsuda, T. Uemura and M. Yamamoto,
�gFabrication
of exchange-biased epitaxial magnetic tunnel junctions with a Heusler alloy Co2Cr0.6Fe0.4Al
thin film�h,
J. Magn. Magn. Mater., vol. 310, Issue 2, Part 3, pp. 1897-1899,
March 2007.
10. T.
Marukame, H. Kijima, T. Ishikawa, K.-i. Matsuda, T. Uemura and M. Yamamoto,
�gSpin-dependent
transport properties of fully epitaxial Co2MnSi/MgO/Co50Fe50
tunnel junctions�h,
J. Magn. Magn. Mater., vol. 310, issue 2, part 3, pp. 1946-1948,
March 2007.
11. H.
Kijima, T. Ishikawa, T. Marukame, K.-i. Matsuda, T. Uemura and M. Yamamoto,
�gFabrication
of fully epitaxial magnetic tunnel junctions with a Co2MnSi thin
film and a MgO tunnel barrier�h,
J. Magn. Magn. Mater., vol. 310, issue 2, part 3, pp. 2006-2008 ,
March 2007.
12. T.
Uemura, T. Yano, K.-i. Matsuda, and M. Yamamoto,
�gAnalysis
of magnetic anisotropy for Co2Cr0.6Fe0.4Al
thin films epitaxially grown on GaAs ",
J.
Magn. Magn. Mater., vol. 310, issue 2, part 3, pp. e696-e698, March 2007.
13. T.
Yano, T. Uemura, K.-i. Matsuda, and M.Yamamoto,
�gEffect
of a MgO interlayer on the structural and magnetic properties of Co2Cr0.6Fe0.4Al
thin films epitaxially grown on GaAs�h,
J.
Appl. Phys., vol. 101, 063904 (4pp), March 2007.
14. T.
Marukame, T. Ishikawa, S. Hakamata, K.-i. Matsuda, T. Uemura, and M. Yamamoto,
�gHighly
spin-polarized tunneling in fully-epitaxial Co2Cr0.6Fe0.4Al/MgO/Co50Fe50
magnetic tunnel junctions with exchange biasing�h,
Appl.
Phys. Lett., vol. 90, 012508 (3pp), January 2007.
2006
1.
T. Ishikawa, T. Marukame, H. Kijima, K.-i.
Matsuda, T. Uemura and M. Yamamoto,
�gSpin-dependent
tunneling characteristics of fully epitaxial magnetic tunnel junctions with a
full-Heusler alloy Co2MnSi thin film and MgO tunnel barrier�h,
2.
T. Marukame, T. Ishikawa, W. Sekine, K.
Matsuda, T. Uemura, and M. Yamamoto,
�gHighly
Spin-Polarized Tunneling in Fully-Epitaxial Magnetic Tunnel Junctions using
Full-Heusler Alloy Co2Cr0.6Fe0.4Al Thin Film
and MgO Tunnel Barrier�h,
IEEE
Trans. on Magn., vol. 42, no. 10, pp. 2652-2654, Oct. 2006.
3.
H. Kijima, T. Ishikawa, T. Marukame, H.
Koyama, K. Matsuda, T. Uemura, and M. Yamamoto,
�gEpitaxial Growth
of Full-Heusler Alloy Co2MnSi Thin Films on MgO-Buffered MgO
Substrates�h,
IEEE
Trans. on Magn., vol. 42, no. 10, pp. 2688-2690, Oct. 2006.
4.
T. Ishikawa, T. Marukame, K.-i. Matsuda,
T. Uemura, and M. Yamamoto,
�gExchange Bias
Effect in Full-Heusler Alloy Co2Cr0.6Fe0.4Al
Epitaxial Thin Films�h,
IEEE
Trans. on Magn., vol. 42, no.10, pp. 3002-3004, Oct. 2006.
5.
T. Marukame, T. Ishikawa, K.-i. Matsuda,
T. Uemura, and M. Yamamoto,
�gHigh tunnel
magnetoresistance in fully epitaxial magnetic tunnel junctions with a
full-Heusler alloy Co2Cr0.6Fe0.4Al thin film�h,
Appl.
Phys. Lett., vol. 88, 262503 (3pp), June 2006.
6.
T. Uemura, R. Miura, T. Yamazuki, T. Sone,
K.-i. Matsuda, and M. Yamamoto;
�gAnalysis of
anisotropic tunnel magneto-resistance of GaMnAs/AlAs/GaMnAs magnetic tunnel
junction�h,
Physica
E: Low-dimensional Systems and Nanostructures, vol. 32, no. 1-2, May 2006, pp.
383-386.
7.
T. Ishikawa, T. Marukame, K. Matsuda, T.
Uemura, M. Arita, and M. Yamamoto,
�gStructural and
magnetic properties of epitaxially grown full-Heusler alloy Co2MnGe
thin films deposited using magnetron sputtering�h,
J.
Appl. Phys., vol. 99, 08J110 (3pp), April 2006.
8.
T. Marukame, T. Ishikawa, K. Matsuda, T.
Uemura, and M. Yamamoto,
�gTunnel
magnetoresistance in epitaxial magnetic tunnel junctions using full-Heusler
alloy Co2MnGe thin film and MgO tunnel barrier�h,
J.
Appl. Phys., vol. 99, 08A904 (3pp), April 2006.
9.
M. Yamamoto, T. Marukame, T. Ishikawa, K.-i.
Matsuda, T Uemura and M Arita;
�gFabrication of
fully epitaxial magnetic tunnel junctions using cobalt-based full-Heusler alloy
thin film and their tunnel magnetoresistance characteristics�h,
J.
Phys. D: Appl. Phys., vol. 39, No.5, pp. 824-833, March. 2006.
10.
K.-i. Matsuda, T. Kasahara, T. Marukame,
T. Uemura and M. Yamamoto;
�gEpitaxial growth
of Co2Cr0.6Fe0.4Al Heusler alloy thin films on
MgO (001) substrates by magnetron sputtering�h,
J.
Crystal Growth, vol. 286, pp. 389-393, January 2006.
2005
1.
T. Uemura, T. Sone, K.-i. Matsuda and M.
Yamamoto;
�gMagnetic
Anisotropy Study for GaMnAs-based Magnetic Tunnel Junction�h,
Jpn. J.
Appl. Phys., vol. 44, no. 44, pp. L1352-L1354, Oct. 2005.
2.
T. Marukame, T. Kasahara, K.-i. Matsuda,
T. Uemura and M. Yamamoto;
�gHigh Tunnel
Magnetoresistance in Epitaxial Co2Cr0.6Fe0.4Al/MgO/CoFe
Tunnel Junctions�h,
IEEE
Trans. on Magn., vol. 41, no. 10, pp. 2603-2605, Oct. 2005.
3.
T. Kasahara, K.-i. Matsuda, T. Marukame,
T. Uemura, and M. Yamamoto,
�hEpitaxial Growth
of Heusler Alloy Co2Cr0.6Fe0.4Al Thin Films by
Magnetron Sputtering�h,
J. The Magnetics
Society of Japan, vol. 29, no. 9, pp. 895-899, Sept. 2005 (in Japanese).
4.
T. Uemura and M. Yamamoto,
�gFour-valued
magnetic random access memory based on magneto tunnel junction and resonant
tunneling diode�h,
J. Multiple-Valued
Logic and Soft Computing, vol. 11, no. 5-6, pp. 467-479 (2005).
5.
T. Marukame, K. Matsuda, T. Uemura, and M.
Yamamoto,
�gEpitaxial growth
of Fe/MgO/Fe heterostuctures on SrTiO3 (001) substrates by magnetron
sputtering�h,
Jpn. J.
Appl. Phys., vol. 44, no. 8, pp. 6012-6015, Aug. 2005.
6.
T. Uemura, K. Sekine, K. Matsuda, and M.
Yamamoto,
�gMagnetic and
Electrical Properties of (La, Sr)MnO3 Sputtered on SrTiO3-buffered
Si Substrate�h,
Jpn. J.
Appl. Phys., vol. 44, no. 4B, pp. 2604-2607, April 2005.
7.
T. Marukame, T. Kasahara, K. Matsuda, T. Uemura,
and M. Yamamoto,
�gFabrication of
fully epitaxial magnetic tunnel junctions using full Heusler alloy Co2Cr0.6Fe0.4Al
thin film and MgO tunnel barrier�h,
Jpn. J.
Appl. Phys., vol. 44, no. 17, pp. L521-524, April 2005.
2004
1.
T. Uemura, S. Honma, T. Marukame, and M.
Yamamoto,
�gNovel MRAM Cell
Consisting of Magneto-Tunnel Junction Connected in Parallel with Negative
Differential Resistance�h,
Jpn. J.
Appl. Phys., vol. 43, no. 4B, pp. 2114-2117, April 2004.
2.
K. Uesugi, M. Kurimoto, I. Suemune, M.
Yamamoto, T. Uemura, H. Machida and N. Shimoyama;
�gObservation of
Clear Negative Differential Resistance Characteristics in GaAsNSe/GaAs and
GaAsNSb/GaAs Multiple Quantum Wells at Room Temperature,
Physica
E, vol.21, No. 2-4, pp. 727-731, March 2004.
3.
T. Uemura, S. Honma, T. Marukame, and M.
Yamamoto,
�gLarge Enhancement
of Tunneling Magneto-resistance Ratio in Magnetic Tunnel Junction Connected in
Series with Tunnel Diode�h,
Jpn. J.
Appl. Phys. vol. 43, No. 1AB, pp. L44 - L46, January 2004.
2003
1.
T. Uemura, S. Honma, T. Marukame, and M.
Yamamoto,
�gProposal and
experimental demonstration of magnetic tunnel junction connected in parallel
with tunnel diode�h,
Electronics
Lett., vol. 39, no. 21, pp. 1549-1551, Oct. 2003.
2.
T. Uemura, T. Marukame, and M. Yamamoto,
�gProposal and
Analysis of a Ferromagnetic Triple-Barrier Resonant-Tunneling Spin Filter�h,
IEEE
Trans. on Magnetics, vol. 39, no. 5, pp. 2809-2811, September, 2003.