Our laboratory is conducting research on nanoelectronic materials* with the aim of creating electronics technology with new electronic and optical functions. (* nanometer is roughly equivalent to the length of 10 atoms.)

We will understand the behavior of electrons and light in nanoelectronic materials such as semiconductors from the viewpoints of electronics and condensed matter physics. We are also engaged in the fabrication of energy-saving light-emitting diodes (LEDs), lasers, photodiodes, and other optoelectronic devices using nanomaterials, the exploration of new photoelectric information conversion devices, and research on plasma simulations for device integration.

In this laboratory, there are graduate students of Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, and students of Department of Electronics and Information Engineering, School of Engineering, Hokkaido University.

Semiconductor crystal growth and fabrication of optoelectronic devices

Using molecular beam epitaxy, we fabricate ultra-pure semiconductor crystals and fabricate optical elements such as LEDs, lasers, and photodiodes through processes such as vacuum deposition, sputtering, and etching.

Ultrafast time-resolved and spin-resolved photoluminescence spectroscopy

The electronic states and the operational characteristics of grown crystals and optoelectronic devices are studied by photoluminescence in the real time region of femto-, pico*-, nano-, and microseconds. The spin state, which is the magnetic property of electrons, can also be analyzed by studying the polarization state of photoluminescence.

(* The distance light can travel in 1 picosecond is only 0.3 mm. 1 picosecond corresponds to a frequency range of 1 terahertz (THz)).

Computational analysis of process plasma

Plasma characteristics for use in semiconductor device integration processes are studied by computational analysis.





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