Our laboratory is conducting research on nanoelectronic materials* with the aim of creating electronics technology with new electronic and optical functions. (* nanometer is roughly equivalent to the length of 10 atoms.)
We will understand the behavior of electrons and light in nanoelectronic materials such as semiconductors from the viewpoints of electronics and condensed matter physics. We are also engaged in the fabrication of energy-saving light-emitting diodes (LEDs), lasers, photodiodes, and other optoelectronic devices using nanomaterials, the exploration of new photoelectric information conversion devices, and research on plasma simulations for device integration.
In this laboratory, there are graduate students of Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, and students of Department of Electronics and Information Engineering, School of Engineering, Hokkaido University.
Using molecular beam epitaxy, we fabricate ultra-pure semiconductor crystals and fabricate optical elements such as LEDs, lasers, and photodiodes through processes such as vacuum deposition, sputtering, and etching.
The electronic states and the operational characteristics of grown crystals and optoelectronic devices are studied by photoluminescence in the real time region of femto-, pico*-, nano-, and microseconds. The spin state, which is the magnetic property of electrons, can also be analyzed by studying the polarization state of photoluminescence.
(* The distance light can travel in 1 picosecond is only 0.3 mm. 1 picosecond corresponds to a frequency range of 1 terahertz (THz)).
Plasma characteristics for use in semiconductor device integration processes are studied by computational analysis.
Efficient Room-Temperature Operation of a Quantum Dot S…
Research results on room temperature operation of field-effect optical spin devices have been published in Advanced Electronic Materials (IF:7.6)
Efficient Room-Temperature Voltage Control of Picosecon…
Room-temperature electron spin polarization exceeding 9…
Awards (Japanese Only)
News (Japanese Only)
High-temperature efficient luminescence of dilute-nitri…
Effect of dilute nitride GaNAs quantum well thickness o…
Room-temperature electric field control of spin filteri…
GaAs/GaInNAs core-multishell nanowires with a triple qu…
Vapor‐Induced Assembly of a Platinum(II) Complex Loaded…
Electric-field driven source of photocarriers for tunab…