峯山大輝さんの希薄窒化物半導体GaNAsを用いた近赤外偏光検出フォトダイオードに関する研究成果がApplied Physics Lettersに掲載されました。
Influence of bias voltage on the perform…
Influence of bias voltage on the perform…
Electrons flip a switch on optical commu…
High-temperature efficient luminescence …
Effect of dilute nitride GaNAs quantum w…
Room-temperature electric field control …
GaAs/GaInNAs core-multishell nanowires w…
Vapor‐Induced Assembly of a Platinum(II)…
Electric-field driven source of photocar…
Efficient Room-Temperature Operation of …
Wafer-scale integration of GaAs/AlGaAs c…
Efficient Room-Temperature Voltage Contr…
Optical characterization and emission en…